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Luminescence in porous silicon: the role of confinement and passivation

โœ Scribed by Stefano Ossicini; L. Dorigoni; O. Bisi

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
305 KB
Volume
102
Category
Article
ISSN
0169-4332

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Porous silicon (PS) films were prepared by anodization on polished and textured substrates of (1 0 0) Si at different current densities for a fixed anodization time of 30 min. Using scanning electron microscopy (SEM), high-resolution X-ray diffractometry (HRXRD) and photoluminescence (PL) decay meas