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Luminescence from Germanium and Germanium on Silicon

✍ Scribed by Arguirov, Tzanimir; Kittler, Martin; Oehme, Michael; Abrosimov, Nikolay V.; Vyvenko, Oleg F.; Kasper, Erich; Schulze, Jörg

Book ID
127023020
Publisher
Trans Tech Publications, Ltd.
Year
2013
Tongue
English
Weight
678 KB
Volume
205-206
Category
Article
ISSN
1662-9779

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We have studied the Ge-Si interdiffusion from structures in which ∼300 nm-thick pure Ge(:B) layers were grown on Si 200 mm substrates by CVD at 450 • C. As-grown samples were capped with SiO 2 and then annealed in the 750-900 • C range for various times. Using the secondary ion mass spectrometry (SI