LPE of Isolated Pb0,85Sn0.15Te Islands on PbTe

✍ Scribed by K. Deppert; Dr. D. Schikora; L. Parthiek; Doz. Dr. L. Ickert

• Book ID: 102129640
• Publisher: John Wiley and Sons
• Year: 1986
• Tongue: English
• Weight: 320 KB
• Volume: 21
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.2170210319

✦ Synopsis

LPE of Isolated Pbu.ssSno.16Te Islands on PbTe

I n recent years the importance of selective epitaxy has continuously increased. It is a tool for controlling the production of semiconductor structures as required. This method has been demonstrated and investigated by LYE as well as VPE and MBE.

Usually substrates are used having either preferentially etched channels or windows in masks to predetermine the site. In the present paper epitaxy of Pbo.&hio.15Te deposits growing in isolated islands on PbTe substrates by means of LPE is investigated.

Experimoiital procedure 111 these cxperiuients widoped PbTe substrates with (100) plane were used. Both sides of