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LPE Growth and Phase Stability of In1–xGaxP at 740 °C

✍ Scribed by Choi, J. S. ;Lyou, H. S. ;Jeong, B. S. ;Chang, S. K. ;Park, H. L.

Publisher
John Wiley and Sons
Year
1991
Tongue
English
Weight
172 KB
Volume
125
Category
Article
ISSN
0031-8965

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✍ H. Rezagholipour Dizaji; R. Dhanasekaran 📂 Article 📅 1996 🏛 Springer US 🌐 English ⚖ 400 KB

Numerical simulation has been used to construct the concentration profiles of Ga and P atoms in In-rich melt at successive equally spaced layers in front of an InGaP crystal growing under normal conditions of liquid phase epitaxy (LPE). The growth rate has been calculated using the concentration gra