✦ LIBER ✦
LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices
✍ Scribed by M.-A. di Forte Poisson; M. Magis; M. Tordjman; R. Aubry; N. Sarazin; M. Peschang; E. Morvan; S.L. Delage; J. di Persio; R. Quéré; B. Grimbert; V. Hoel; E. Delos; D. Ducatteau; C. Gaquiere
- Book ID
- 108165946
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 411 KB
- Volume
- 272
- Category
- Article
- ISSN
- 0022-0248
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