✦ LIBER ✦
Low writing current magnetoresistive random access memory (MRAM) with side metal pillar write word line (PWWL)
✍ Scribed by C.C. Hung; M.J. Kao; W.C. Lin; S. Chao; D. Tang; M.-J. Tsai
- Book ID
- 108183961
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 447 KB
- Volume
- 282
- Category
- Article
- ISSN
- 0304-8853
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