Low-voltage operation GaAs spike-gate power FET with high power-added efficiency
β Scribed by Tanaka, T.; Furukawa, H.; Takenaka, H.; Ueda, T.; Fukui, T.; Ueda, D.
- Book ID
- 114536691
- Publisher
- IEEE
- Year
- 1997
- Tongue
- English
- Weight
- 139 KB
- Volume
- 44
- Category
- Article
- ISSN
- 0018-9383
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π SIMILAR VOLUMES
A novel simple microwave power detector using a GaAs MESFET is developed at 5.8 GHz. The FET detector has good noise characteristics, temperature stability, and dynamic range. Since the availability of FET is more flexible and the price is lower, the FET detector can be more cost effective than the
## Abstract This paper presents a 2.12βGHz GaAs FET dualβoperationβmode amplifier with a new efficiencyβenhancing technique that employs novel switchable 1:1/1:0 ratio powerβrouting schemes. The amplifier switches its operation, depending upon a required power level, to either a lowβpower or highβp