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Low threshold and high uniformity for novel 1.3-/spl mu/m-strained InGaAsP MQW DC-PBH LDs fabricated by the all-selective MOVPE technique

✍ Scribed by Sakata, Y.; Inomoto, Y.; Saito, D.; Komatsu, K.; Hasumi, H.


Book ID
119785920
Publisher
IEEE
Year
1997
Tongue
English
Weight
103 KB
Volume
9
Category
Article
ISSN
1041-1135

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