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Low temperature poly-SixGe1−x deposited by reactive thermal CVD for thin film transistor application

✍ Scribed by J.J Zhang; K Shimizu; J Hanna


Book ID
117145658
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
149 KB
Volume
299-302
Category
Article
ISSN
0022-3093

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