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Low-temperature photoluminescence and X-ray diffractometry study of InxGa1−xAs quantum wells

✍ Scribed by S. V. Evstigneev; R. M. Imamov; A. A. Lomov; Yu. G. Sadof’ev; Yu. V. Khabarov; M. A. Chuev; D. S. Shipitsin


Book ID
110120408
Publisher
Springer
Year
2000
Tongue
English
Weight
93 KB
Volume
34
Category
Article
ISSN
1063-7826

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Some properties of strained InxGa1-xAs/A
✍ S.F. Yoon; K. Radhakrishnan; H.M. Li 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 315 KB

Low temperature photoluminescence measurements were carried out on pseudomorphlcally strained In \(\mathrm{Ga}_{1-\mathrm{A}} \mathrm{As}-\mathrm{Al} \mathrm{O}_{0.28} \mathrm{Ga}_{0.72} \mathrm{As}\) ternary-on-ternary heterostructures grown by molecular beam epitaxy to investigate the change in th