Low temperature magnetoresistance of GaAs/AiGaAs corrugated-gate wires
✍ Scribed by A.W. Widjaja; N. Sasaki; K. Yamamoto; Y. Ochiai; K. Ishibashi; J.P. Bird; Y. Aoyagi; T. Sugano; D.K. Ferry
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 356 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
We study quantum interference effects which are observed in the low temperature magnetoresistance of corrugated-gate wires fabricated in the GaAs/AlGaAs modulation-doped heterostructure system. Negative magnetoresistance, which appears over a large range of magnetic field, is observed. In addition, small oscillations in the magnetoresistance are observed. We believe these results are caused by boundary (or geometry-induced) scattering, within the gated wire, which evolves as the nature of the system changes from a quantum-dot array to a wire with weak modulation.