Low temperature lattice parameters of Al
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J. Bandyopadhyay; K.P. Gupta
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Article
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1978
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Elsevier Science
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English
⚖ 160 KB
bltle or no degradaUon m their charactenshcs at 4.2 K. A general improvement in operating speed was observed at low temperatures. ']"he ma.xLmum operating Irequency ol • some rhp.flops al 4.2 K was an order ol magmtude greater than at room temperature• CMOS devices are ideally suiled for many cryoge