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Low temperature electrical transport in n-type lead telluride

✍ Scribed by A. Lasbley; R. Granger; C.M. Pelletier; S. Rolland


Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
264 KB
Volume
77
Category
Article
ISSN
0375-9601

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πŸ“œ SIMILAR VOLUMES


Quantum transport in n-type and p-type m
✍ G. Landwehr; J. GerschΓΌtz; S. Oehling; A. Pfeuffer-Jeschke; V. Latussek; C.R. Be πŸ“‚ Article πŸ“… 2000 πŸ› Elsevier Science 🌐 English βš– 200 KB

Asymmetrically modulation-doped HgTe quantum wells of (0 0 1) orientation were produced by molecular beam epitaxy. N-type doping was achieved with iodine and p-type doping by the incorporation of nitrogen. At 4.2 K the n-type samples have electron mobilities up to 10 5 cm 2 =Vs, the maximum Hall mob