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Low-temperature conductance measurements of surface states in HfO2–Si structures with different gate materials

✍ Scribed by Y. Gomeniuk; A. Nazarov; Ya. Vovk; Yi Lu; O. Buiu; S. Hall; J.K. Efavi; M.C. Lemme


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
178 KB
Volume
9
Category
Article
ISSN
1369-8001

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