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Low-temperature (77–300 K) current-voltage characteristics of 4H-SiCp+-p-n+diodes: Effect of impurity breakdown in thep-type base

✍ Scribed by P. A. Ivanov; A. S. Potapov; T. P. Samsonova


Book ID
114992397
Publisher
Springer
Year
2012
Tongue
English
Weight
166 KB
Volume
46
Category
Article
ISSN
1063-7826

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