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Low-insertion-loss hybrid p-i-n diode switches in Ku and Ka bands

✍ Scribed by Louis-Antoine Blais-Morin; Jean-Jacques Laurin

Publisher: John Wiley and Sons
Year: 2000
Tongue: English
Weight: 199 KB
Volume: 28
Category: Article
ISSN: 0895-2477
DOI: 10.1002/1098-2760(20010105)28:1<28::aid-mop8>3.0.co;2-e

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✦ Synopsis

A no¨el switch topology is proposed in which p-i-n diodes are embedded in a transformer network free of ¨ia holes. The topology is designed to achie¨e cancellation of diode parasitics and optimization of insertion loss. Prototypes for 15 and 29.75 GHz operation showing ( ) ¨ery good insertion loss -0.5 dB are presented.

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High-performance L-band series and paral

High-performance L-band series and parallel switches using low-cost p-i-n diodes

✍ Nemai C. Karmakar; Marek E. Bialkowski 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 333 KB

## Abstract Low‐cost UHF‐band __p‐i‐n__ diodes are used to develop high‐performance __L__‐band series and parallel switches. To stop the rectification of large RF signals, the diodes are biased at a large reverse‐bias voltage. Parasitic elements of the diodes are tuned out using LC circuits in bias