Low-frequency secondary radiation in polar semiconductors at finite temperature

✍ Scribed by F. Comas; C. Trallero Giner

• Publisher: John Wiley and Sons
• Year: 1983
• Tongue: English
• Weight: 536 KB
• Volume: 116
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/pssb.2221160205

✦ Synopsis

Abstract

Secondary radiation in polar direct–gap semiconductors is considered for finite, but not too large, temperatures. For sufficiently pure and perfect samples, photoexcited electrons (holes) relax via phonon scattering. Assuming an infinite recombination time, the differential cross‐section for photon emission is calculated in the low‐frequency region of the spectra. Rather intense secondary radiation is predicted for high temperatures. The general shape of emission and excitation spectra is discussed in detail.