Theoretical and practical issues concerning the nonlinear dynamic modelling of electron devices are discussed in this article. All the different dynamic phenomena, which are important for the description of the device behaviour, are comprehensively dealt with by means of a unified mathematical deriv
Low-frequency noise conversion modeling in RF devices under forced nonlinear operation
โ Scribed by Gabriele Conte; Francesco Bertazzi; Simona Donati Guerrieri; Fabrizio Bonani; Giovanni Ghione
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 283 KB
- Volume
- 16
- Category
- Article
- ISSN
- 1096-4290
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โฆ Synopsis
The article addresses the frequency conversion of low-frequency noise deriving from trap-assisted generation-recombination (GR) noise in RF devices under forced, nonlinear operation through a physics-based noise model. The superposition of the stationary (small-signal) GR spectra originating from noninteracting trap levels with properly distributed energies is shown, in simple yet significant device case studies, to yield a 1/f or 1/f-like behaviour over a prescribed frequency range. The same trap distribution is also exploited for large-signal, cyclostationary noise simulation in forced periodic conditions. In this case, low-frequency 1/f-like noise is shown to be upconverted from the baseband to all noise sidebands. Circuit-level compact modeling strategies for noise-frequency conversion based on the modulation of small-signal low-frequency noise are also investigated and compared to the fundamental approach.
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