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Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application

✍ Scribed by Esseni, D.; Mastrapasqua, M.; Celler, G.K.; Fiegna, C.; Selmi, L.; Sangiorgi, E.


Book ID
114538970
Publisher
IEEE
Year
2001
Tongue
English
Weight
226 KB
Volume
48
Category
Article
ISSN
0018-9383

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