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Low energy ion mixing in Si-Ge multilayer system

✍ Scribed by M. Menyhard; A. Barna; A. Sulyok; K. Järrendahl; J-E. Sundgren; J.P. Biersack

Book ID
113285850
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
438 KB
Volume
85
Category
Article
ISSN
0168-583X

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Low-energy atomic mixing is experimentally studied on a Ge/Si amorphous multilayer system by means of Auger depth profiling and XTEM. The ion etching was performed by using Ar ions of energy 500 eV (XTEM) and 618 eV (Auger) and angle of incidence >84" and the specimen was rotated during sputtering.