80-GHz AlGaInAs/InP 1.55µm colliding-pul
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L.P. Hou; M. Haji; C. Li; B.C. Qiu; A.C. Bryce
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Article
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2011
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John Wiley and Sons
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English
⚖ 152 KB
We present an 80-GHz λ ∼ 1.55 μm passively colliding-pulse mode-locked laser based on a novel Al-GaInAs/InP epitaxial structure, which consists of a strained 3quantum-well active layer incorporated with a passive far-field reduction layer. The device generated 910 fs pulses with a stateof-art timing