Low-dimensional electron transport properties in InAs/AlGaSb mesoscopic structures

✍ Scribed by M. Inoue; T. Sugihara; T. Maemoto; S. Sasa; H. Dobashi; S. Izumiya

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 194 KB
• Volume: 21
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1996.0170

✦ Synopsis

We report on the successful fabrication and electrical transport properties of single quantum wires fabricated by using InAs/AlGaSb heterostructures. Magnetotransport and high electric field characteristics have been measured on the various size of quantum wires. From comparison with the channel length-dependence of I-V characteristics of the different size quantum wires, we try to develop a comprehensive understanding on the quasi-one dimensional electron transport in InAs from the nearly ballistic regime to the hot electron condition.

The fabrication and characteristics of superconducting weak link InAs/Pb:In devices are also reported. The modulation of differential conductivity has been observed by the gate bias voltage between the superconducting Pb-In contacts.