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Low defect density amorphous silicon germanium alloy (1.5 eV) deposited at high growth rate under helium dilution in RF-PECVD method

✍ Scribed by Sukti Hazra; A.R. Middya; Swati Ray


Book ID
117148125
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
549 KB
Volume
211
Category
Article
ISSN
0022-3093

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