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Low current dispersion and low bias-stress degradation of unpassivated GaN/AlGaN/GaN/SiC HEMTs

✍ Scribed by J. Bernát; R. Pierobon; M. Marso; J. Flynn; G. Brandes; G. Meneghesso; E. Zanoni; P. Kordoš


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
150 KB
Volume
2
Category
Article
ISSN
1862-6351

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