Long wavelength electrically pumped GaSb-based buried tunnel junction VCSELs

✍ Scribed by Alexander Bachmann; Shamsul Arafin; Kaveh Kashani-Shirazi; Markus-Christian Amann

• Book ID: 103880784
• Publisher: Elsevier
• Year: 2010
• Tongue: English
• Weight: 769 KB
• Volume: 3
• Category: Article
• ISSN: 1875-3892
• DOI: 10.1016/j.phpro.2010.01.155

✦ Synopsis

Long wavelength lasers are attractive light sources for free-space communications, military countermeasures, medical applications and trace-gas sensing systems by tunable diode laser absorption spectroscopy (TDLAS). As technically important gases, such as CO, CO 2 or CH 4 , show strong absorption lines in a wavelength range from 2 to 3.5 μm, one is interested in the development of lasers emitting in that region. The (AlGaIn)(AsSb) material-system based on GaSb is the material of choice for devices in the near-to mid-infrared spectral region. In this paper, we present the device structure, design and results of an electrically-pumped GaSb-based VCSEL. The devices consist of an epitaxial GaSb / AlAsSb distributed Bragg reflector (DBR), a GaInAsSb quantum well gain section, a dielectric top DBR and a buried tunnel junction (BTJ) for electrical as well as optical confinement. Continuous-wave (cw) single-mode emission has been achieved up to a record high ambient temperature of 90°C. The wavelength is (electro-) thermally tunable from 2345 nm to 2365 nm. A maximum output power of 800 μW has been measured at 0°C.