Localized states in epitaxial film

✍ Scribed by H.-S. Chang; T.M. Hsu; T.-F. Chuang; W.-Y. Chen; S. Gwo; C.-H. Shen

• Book ID: 104093590
• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 1004 KB
• Volume: 149
• Category: Article
• ISSN: 0038-1098
• DOI: 10.1016/j.ssc.2008.10.028

✦ Synopsis

This study investigated localized states from In 0.36 Ga 0.64 N epitaxial film grown on a Si (111) substrate by performing macro-photoluminescence, micro-photoluminescence and time-resolved micro-photoluminescence experiments. Experimental data revealed two localized states -single and extended. The single localized state is a single-quantum-dot-like deep confined energy state, which is responsible for the bright line emissions. The extended localized state is a shallow confined energy state, which is related to a broad background emission. This work suggests that the origin of single and extended localized states is the indium-rich In x Ga 1-x N cluster and the spatial indium concentration fluctuation, respectively.