✦ LIBER ✦
Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements
✍ Scribed by Silvestri, Marco; Uren, Michael J.; Killat, Nicole; Marcon, Denis; Kuball, Martin
- Book ID
- 121472532
- Publisher
- American Institute of Physics
- Year
- 2013
- Tongue
- English
- Weight
- 594 KB
- Volume
- 103
- Category
- Article
- ISSN
- 0003-6951
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