Localization effects of kondo semimetals CeNiSn and CeRhSb
✍ Scribed by T Takabatake; G Nakamoto; T Yoshino; H Fujii; K Izawa; S Nishigori; H Goshima; T Suzuki; T Fujita; K Maezawa; T Hiraoka; Y Okayama; I Oguro; A.A Menovsky; K Neumaier; A Brückl; K Andres
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 514 KB
- Volume
- 223-224
- Category
- Article
- ISSN
- 0921-4526
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The longitudinal magnetoresistance of the Kondo semiconductor single crystals CeNiSn and CeRhSb are i~vestigated up to 36T below 4.2 K. Large negative magnetoresistances are found at low temperatures with the field along the b-and c-axis, similar to the field direction along the a-axis in the previo
The gapped state in Kondo semiconductors CeNiSn and CeRhSb has been investigated by measurements of nuclear-spin laftice relaxation rate, 1/T~ of ll9Sn and 1235b and Knight shift of 1195n and 12~Sb. The T-dependences of T 1 and the shift in both compounds have revealed a novel feature for the gap st