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Localization and interdot carrier transfer in CdSe and CdZnMnSe quantum dots determined by cw and time-resolved photoluminescence

โœ Scribed by Park, J. H.; Choi, D. G.; Lee, T. K.; Oh, Eunsoon; Lee, Sanghoon; Furdyna, J. K.


Book ID
120273724
Publisher
American Institute of Physics
Year
2007
Tongue
English
Weight
647 KB
Volume
90
Category
Article
ISSN
0003-6951

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Employing two different growth methods: standard molecular beam epitaxy (MBE) and lowtemperature atomic layer epitaxy (ALE) with subsequent annealing, we have obtained highquality quantum dot structures consisting of CdSe embedded in ZnSe. Single dot emission lines are observed in micro-luminescence