Disorder-Activated Scattering and Two-Mo
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N. Wieser; O. Ambacher; H. Angerer; R. Dimitrov; M. Stutzmann; B. Stritzker; J.K
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Article
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1999
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John Wiley and Sons
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English
⚖ 184 KB
Micro-Raman spectroscopy has been applied to isotopically pure Ga i N (i = 14, 15) epitaxial films in which structural disorder was introduced by ion implantation or mechanical damage. A pair of Raman peaks appearing at about 300 (300) and 667 (646) cm ± ±1 is consistent with the anion mass 14 (15)