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Local-density approximation study ofp-Si/n-Si nanoscale junctions

✍ Scribed by V.G. Zavodinsky; I.A. Kuyanov

Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 245 KB
Volume: 20
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.1996.0066

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✦ Synopsis

We have performed a first-principles local-density cluster investigation of nanoscale p-Si/n-Si junctions. Al and P atoms were used as dopants and Al-P distances were of order a few A ˚ngstroms. The thermoemission current-voltage characteristics were calculated in addition to the electronic structure. It was shown that a rectifying nanoscale p-n junction can be formed in silicon if the distance between donor and acceptor atoms is not too small (about 1 nm).

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