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Liquid phase epitaxy of highly strained InGaAsP/GaAs films in the 1.4–1.8 eV interval of band gaps

✍ Scribed by Yu.B. Bolkhovityanov; A.S. Jaroshevich; N.V. Nomerotsky; M.A. Revenko; E.M. Trukhanov


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
498 KB
Volume
158
Category
Article
ISSN
0022-0248

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