Liquid phase epitaxial growth of AlGaAsGaAs heterostructures for solar energy conversion
✍ Scribed by Prof. R. Romero; E. Purón
- Publisher
- John Wiley and Sons
- Year
- 1981
- Tongue
- English
- Weight
- 341 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0232-1300
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
The operation principles of four novel Al~x~Ga~1−x~AsGaAs heterostructure concentrator cells are discussed together with the LPE growth of such structures. Typical temperature schedules, boat design and melt composition are presented, and a detailed description of the technological procedure involved is offered.
📜 SIMILAR VOLUMES
The aim of this experiment is to grow a thin silicon layer (<50µm) by Liquid Phase Epitaxy (LPE) onto porous silicon. This one acts as a sacrificial layer in order to transfer the 50 µm epitaxial layer onto foreign substrates like ceramics. After transfer, the silicon wafer is then re-usable. In thi
## Abstract In situ X‐ray examination at a synchrotron beamline of the solution growth of self‐assembled SiGe structures on silicon (001) substrates through the backside has been realized by a specific heating equipment and a suitable growth assembly. The furnace allows heating of the growth assemb