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Linear and nonlinear optical properties of excitons in semiconductor–dielectric quantum wires

✍ Scribed by K. Chernoutsan; V. Dneprovskii; S. Gavrilov; V. Gusev; E. Muljarov; S. Romanov; A. Syrnicov; O. Shaligina; E. Zhukov


Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
120 KB
Volume
15
Category
Article
ISSN
1386-9477

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✦ Synopsis


The characteristic features of the absorption, luminescence and photoluminescence excitation spectra of InP nanocrystals crystallized in chrysotile asbestos nanotubes and CdS nanocrystals crystallized in hollow channels of a dielectric template have been explained in terms of exciton transitions in semiconductor-dielectric quantum wires. In these structures, the dielectric conÿnement e ect leads to a considerable increase of the exciton binding energy-the Coulomb attraction between electron and hole is considerably enhanced as a result of the di erence between the permittivities of the semiconductor and insulator.

The kinetics of porous InP photoluminescence at high excitation by picosecond laser pulses has been explained by the slowing down of the intraband energy relaxation, collective exciton-exciton (electron) interaction and Auger recombination in nanostructures.


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Nonlinear optical transmission at discrete frequencies (bleaching bands) has been observed in CdSe and GaAs quantum wires crystallized in chrysotile asbestos nanotubes with average diameter ≈6 nm and in nanocrystals of CdS (crystallized in the transparent molecular filter-mica with empty channels of