✦ LIBER ✦
Limit of gate oxide thickness scaling in MOSFETs due to apparent threshold voltage fluctuation induced by tunnel leakage current
✍ Scribed by Koh, M.; Mizubayashi, W.; Iwamoto, K.; Murakami, H.; Ono, T.; Tsuno, M.; Mihara, T.; Shibahara, K.; Miyazaki, S.; Hirose, M.
- Book ID
- 114538561
- Publisher
- IEEE
- Year
- 2001
- Tongue
- English
- Weight
- 224 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0018-9383
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