๐”– Scriptorium
โœฆ   LIBER   โœฆ

๐Ÿ“

Lightwave Communications Technology: Material Growth Technologies

โœ Scribed by W.T. Tsang (Eds.)


Publisher
Academic Press
Year
1985
Tongue
English
Leaves
416
Series
Semiconductors and Semimetals 22, Part A
Category
Library

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โœฆ Table of Contents


Content:
Edited by
Page iii

Copyright page
Page iv

List of Contributors
Page ix

Treatise Foreword
Page xi
R.K. Willardson, Albert C. Beer

Foreword
Pages xiii-xvi
C.K.N. Patel

Preface
Pages xvii-xix

Chapter 1 The Liquid-Phase Epitaxial Growth of InGaAsP Original Research Article
Pages 1-94
Kazuo Nakajima

Chapter 2 Molecular Beam Epitaxy for IIIโ€“V Compound Semiconductors Original Research Article
Pages 95-207
W.T. Tsang

Chapter 3 Organometallic Vapor-Phase Epitaxial Growth of IIIโ€“V Semiconductors Original Research Article
Pages 209-259
G.B. Stringfellow

Chapter 4 Halide and Chloride Transport Vapor-Phase Deposition of InGaAsP and GaAs Original Research Article
Pages 261-298
G. Beuchet

Chapter 5 Low-Pressure Metallo-Organic Chemical Vapor Deposition of GaxIn1โˆ’xAsyP1โˆ’y Alloys Original Research Article
Pages 299-378
Manijeh Razeghi

Chapter 6 Defects in IIIโ€“V Compound Semiconductors Original Research Article
Pages 379-403
P.M. Petroff

Index
Pages 405-408


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