Lightwave Communications Technology: Material Growth Technologies
โ Scribed by W.T. Tsang (Eds.)
- Publisher
- Academic Press
- Year
- 1985
- Tongue
- English
- Leaves
- 416
- Series
- Semiconductors and Semimetals 22, Part A
- Category
- Library
No coin nor oath required. For personal study only.
โฆ Table of Contents
Content:
Edited by
Page iii
Copyright page
Page iv
List of Contributors
Page ix
Treatise Foreword
Page xi
R.K. Willardson, Albert C. Beer
Foreword
Pages xiii-xvi
C.K.N. Patel
Preface
Pages xvii-xix
Chapter 1 The Liquid-Phase Epitaxial Growth of InGaAsP Original Research Article
Pages 1-94
Kazuo Nakajima
Chapter 2 Molecular Beam Epitaxy for IIIโV Compound Semiconductors Original Research Article
Pages 95-207
W.T. Tsang
Chapter 3 Organometallic Vapor-Phase Epitaxial Growth of IIIโV Semiconductors Original Research Article
Pages 209-259
G.B. Stringfellow
Chapter 4 Halide and Chloride Transport Vapor-Phase Deposition of InGaAsP and GaAs Original Research Article
Pages 261-298
G. Beuchet
Chapter 5 Low-Pressure Metallo-Organic Chemical Vapor Deposition of GaxIn1โxAsyP1โy Alloys Original Research Article
Pages 299-378
Manijeh Razeghi
Chapter 6 Defects in IIIโV Compound Semiconductors Original Research Article
Pages 379-403
P.M. Petroff
Index
Pages 405-408
๐ SIMILAR VOLUMES
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