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Light Induced Transient Grating Decay in Si and Some AIIBIV Compounds

✍ Scribed by Gaubas, E. ;Jarašiūnas, K. ;Vaitkus, J.

Publisher
John Wiley and Sons
Year
1982
Tongue
English
Weight
195 KB
Volume
69
Category
Article
ISSN
0031-8965

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## Abstract We report on a contactless, all‐optical study of carrier diffusion and recombination kinetics in single‐crystalline diamond layers using the light‐induced transient grating (LITG) technique. Decay times of transient diffraction grating yielded carrier lifetime of __τ__~R~ ≈ 3 ns and bip