✦ LIBER ✦

Light Extracting Properties of Buried Photonic Quasi-Crystal Slabs in InGaN/GaN LEDs

✍ Scribed by Lewins, C. J.; Allsopp, D. W. E.; Shields, P. A.; Gao, X.; Humphreys, B.; Wang, W. N.

Book ID: 121874904
Publisher: Institute of Electrical and Electronics Engineers
Year: 2013
Tongue: English
Weight: 835 KB
Volume: 9
Category: Article
ISSN: 1551-319X
DOI: 10.1109/JDT.2012.2233194

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Enhanced Light Extraction by Photonic Qu

Enhanced Light Extraction by Photonic Quasi-Crystals in GaN Blue LEDs

✍ Shields, P.A.; Charlton, M.; Lee, T.; Zoorob, M.E.; Allsopp, D.W.E.; Wang, W.N. 📂 Article 📅 2009 🏛 IEEE 🌐 English ⚖ 770 KB

Light extraction of GaN LEDs with 2-D ph

Light extraction of GaN LEDs with 2-D photonic crystal structure

✍ Hongwei Liu, 刘宏伟; Qiang Kan, 阚强; Chunxia Wang, 王春霞; Feng Yu, 於丰; Xingsheng Xu, 许 📂 Article 📅 2009 🏛 Optics InfoBase 🌐 English ⚖ 422 KB

High Light Extracting Efficiency of Gan-

High Light Extracting Efficiency of Gan-Based LED Based on Photonic Crystal

✍ Yanting Fan; Xiaoling Wang 📂 Article 📅 2012 🏛 Elsevier 🌐 English ⚖ 312 KB

Design Optimization of Photonic Crystal

Design Optimization of Photonic Crystal Structure for Improved Light Extraction of GaN LED

✍ Dang Hoang Long; In-Kag Hwang; Sang-Wan Ryu 📂 Article 📅 2009 🏛 IEEE 🌐 English ⚖ 396 KB

Optimization design of holographic photo

Optimization design of holographic photonic crystal for improved light extraction efficiency of GaN LED

✍ Shen, X.X.; Ren, Y.Z.; Dong, G.Y.; Wang, X.Z.; Zhou, Z.W. 📂 Article 📅 2013 🏛 Elsevier Science 🌐 English ⚖ 587 KB

Effect of coalescence layer thickness on

Effect of coalescence layer thickness on the properties of thin-chip InGaN/GaN light emitting diodes with embedded photonic quasi-crystal structures

✍ Shields, Philip A. ;Charlton, Martin D. B. ;Lewins, Christopher J. ;Gao, Xiang ; 📂 Article 📅 2012 🏛 John Wiley and Sons 🌐 English ⚖ 379 KB

## Abstract The simulation, fabrication and optical characterization of InGaN/GaN MQW‐LEDs grown by MOVPE over embedded photonic quasi‐crystals (PQCs) are reported. Fully coalesced GaN layers as thin as 140 nm were grown over 1200 nm high air‐gap PQCs using an intermittent pulsed/normal growth meth