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Light-emission potential of Si-based nanostructures from calculated absorption coefficient

✍ Scribed by Sumitra Ghosh; P. K. Basu


Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
128 KB
Volume
30
Category
Article
ISSN
0895-2477

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✦ Synopsis


Abstract

The values of the absorption coefficient in coupled Si/SiGe and Si/SiGeC nanostructures are calculated for quasidirect no‐phonon transition due to the momentum spread of electrons spatially confined in ultrathin layers. The values in quantum dots are found to be as large as that in bulk GaAs. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 30: 352–355, 2001.