We adapt the level set method to simulate the growth of thin films described by the motion of island boundaries. This island dynamics model involves a continuum in the lateral directions, but retains atomic scale discreteness in the growth direction. Several choices for the island boundary velocity
Level-set method for island dynamics in epitaxial growth
โ Scribed by Ratsch, C.; Gyure, M. F.; Caflisch, R. E.; Gibou, F.; Petersen, M.; Kang, M.; Garcia, J.; Vvedensky, D. D.
- Book ID
- 118130867
- Publisher
- The American Physical Society
- Year
- 2002
- Tongue
- English
- Weight
- 294 KB
- Volume
- 65
- Category
- Article
- ISSN
- 1098-0121
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๐ SIMILAR VOLUMES
We present a level set based numerical algorithm for simulating a model of epitaxial growth. The island dynamics model is a continuum model for the growth of thin films. In this paper, we emphasize the details of the numerical method used to simulate the island dynamics model.
Modeling of microstructural evolution during thin-film deposition requires a knowledge of several key activation energies (surface diffusion, island edge atom diffusion, adatom migration over descending step edges, etc.). These and other parameters must be known as a function of crystal orientation.