Level-Resonance Transition of Deep States Produced by Nitrogen Vacancies in Nitride Semiconductors

✍ Scribed by E. Yamaguchi; K. Shiraishi; H. Kageshima

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 128 KB
• Volume: 211
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/(sici)1521-3951(199901)211:1<157::aid-pssb157>3.0.co;2-s