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Level of dangling bond centres and its broadening due to disorder in amorphous silicon as elucidated by optically detected magnetic resonance measurements

✍ Scribed by K. Morigaki; Y. Sano; I. Hirabayashi; M. Konagai; M. Suzuki


Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
396 KB
Volume
43
Category
Article
ISSN
0038-1098

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