The feasibility of using an Al-alloy fil
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Jun Li; Xiao-Wen Zhang; Liang Zhang; Hua-Ping Lin; Hao Zhang; Xue-Yin Jiang; Zhi
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Article
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2010
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Elsevier Science
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English
โ 612 KB
An n + -doped-layer-free microcrystalline silicon thin-film transistor (ยตc-Si TFT) with Al alloy as the source/drain (S/D) electrode was fabricated and investigated. The device showed a field-effect mobility of 0.28 cm 2 /V s and a threshold voltage of 5.3 V. The mobility measured in the linear regi