LDMOS RF power amplifiers with improved performance characteristics using defected ground structure
✍ Scribed by H. Koulouzis; D. Budimir
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 520 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
An LDMOS RF power amplifier with improved performance characteristics such as intermodulation distortion (IMD) and power-added efficiency (PAE) using a defected ground structure (DGS) matching circuit and bias lines is presented. The injection of the fundamental-signal 2 nd harmonics in the amplifier together with the two fundamental signals will produce additional IM products at the output. By proper selection of phase and amplitude of the injected second harmonic signals, it is possible to improve the IMD performance. The resultant PAE of power amplifier with DGS matching circuit and bias lines is improved by up to 6%.