✦ LIBER ✦

Layer Systems on the Base of Nitrogen-Doped Tantalum and Niobium with Enhanced Stability

✍ Scribed by A. I. Fedorenko; V. V. Starikov; Yu L. Pozdeev; I. N. Lykov

Publisher: John Wiley and Sons
Year: 1997
Tongue: English
Weight: 388 KB
Volume: 32
Category: Article
ISSN: 0232-1300
DOI: 10.1002/crat.2170320617

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✦ Synopsis

Abstract

There are presented the results of the investigation of tantalum‐ and niobium‐based metal‐oxide bilayers degration in dependence on chemical composition of base metal. Nitrogen dissolved in metal increases stability of chemical composition and electrical properties of oxide films grown on the metal surface by anodic oxidation. This improves reliability and life time of electronic devices containing tantalum‐ or niobium‐based layer systems. The best positive effect of doping tantalum and niobium by nitrogen was achieved after preliminary refining of these metals from oxygen. When nitrogen concentration in the base metal essentialy exceeds its solubility limit at room temperature and nitride phases are formed the dielectrical properties of oxide film get worsen.

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