Lattice strain of B–B pairs formed by He irradiation in crystalline Si1−xBx/Si
✍ Scribed by G. Bisognin; D. De Salvador; E. Napolitani; A. Carnera; L. Romano; A.M. Piro; S. Mirabella; M.G. Grimaldi
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 344 KB
- Volume
- 253
- Category
- Article
- ISSN
- 0168-583X
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✦ Synopsis
This work reports on the lattice strain induced by small B clusters in Si produced by He irradiation of an epitaxial layer uniformly doped with substitutional B. By means of high resolution X-ray diffraction measurements and nuclear reaction analysis, lattice strain profiles and B lattice location of the sample before and after He irradiation were extracted, respectively. We found that, as a consequence of He irradiation, all B atoms form B-B pairs, and the tensile strain status of the as-grown B-doped layer lowers by a factor of about 2. Moreover, the volume lattice expansion DV per clustered B atom was found to be (À(10.0 ± 0.6) A ˚3). This negative value of DV is very different from the positive one (+(3.7 ± 0.6) A ˚3) found for B clusters created as a consequence of the B interaction with self-interstitials produced by Si implantation and subsequent annealing [G.