The performance enhancement of the semiconductor laser for 1.3ยตm optical communications has been required. But lasing characteristics in the high-temperature operation are poor for the present InGaAsP/InP double-heterostructure (DH) lasers. As a means for solving it, 1.3ยตm-wavelength InGaAs/InGaP DH
โฆ LIBER โฆ
Lattice-matched and lattice-mismatched growth on novel GaAs substrate orientations
โ Scribed by P.N. Uppal; J.S. Ahearn; S.P. Svensson; R. Herring
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 557 KB
- Volume
- 95
- Category
- Article
- ISSN
- 0022-0248
No coin nor oath required. For personal study only.
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