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Lattice distortion near InGaP compound semiconductor surface due to surface treatment of bias sputtering

✍ Scribed by T. Emoto; Y. Yoshida; K. Akimoto; A. Ichimiya; S. Kikuchi; K. Itagaki; H. Namita


Book ID
108418111
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
113 KB
Volume
216
Category
Article
ISSN
0169-4332

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