Lattice disorder in neutron irradiated GaN: Nuclear reaction analysis and Rutherford backscattering studies

✍ Scribed by K. Kuriyama; Y. Mizuki; H. Sano; A. Onoue; K. Kushida; M. Okada; M. Hasegawa; I. Sakamoto; A. Kinomura

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 184 KB
• Volume: 249
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2006.03.098

✦ Synopsis

Disorders of N and Ga lattice in GaN, introduced by fast neutron irradiation with a fluence of 6.7 • 10 18 cm À2 , are investigated by nuclear reaction analysis (NRA) using 14 N(d, p) 15 N reaction with 2.6 MeV D þ 2 ions and by Rutherford backscattering (RBS) with 1.5 MeV 4 He + ions. The h0 0 0 1i aligned NRA yield measured in as-irradiated GaN slightly increases compared with that of un-irradiated crystals, indicating that primary knock-on (PKO) produced by the neutrons results in $7.2 • 10 2 displaced N atoms. The slight increase in the aligned RBS yield for as-irradiated samples relative to that of un-irradiated ones indicates that the $1.8 • 10 2 displaced Ga atoms are produced by PKO. The displacement of N atoms is four times larger than that of Ga atoms, reflecting the lighter weight of N than Ga, although both the displacements are recovered by annealing over 1000 °C. The displacement of Ga atoms in GaN is two times smaller than that in GaP ($3.0 • 10 2 atoms/PKO), showing the stronger bonds in GaN than GaP.