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Lateral Scale Down of InGaAs/InAs Composite-Channel HEMTs With Tungsten-Based Tiered Ohmic Structure for 2-S/mm gm and 500-GHz fT

✍ Scribed by Hideaki Matsuzaki; Takashi Maruyama; Toshihiko Koasugi; Hiroyuki Takahashi; Masami Tokumitsu; Takatomo Enoki


Book ID
114618606
Publisher
IEEE
Year
2007
Tongue
English
Weight
556 KB
Volume
54
Category
Article
ISSN
0018-9383

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